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Dr. Denis Zhigunov

Education and current position:

  • 1997 2003: Student, M.V. Lomonosov Moscow State University, Faculty of Physics, Department of Quantum Electronics.
    Diploma work (2003): Influence of polarons on the optical properties of LiNbO3:Mg crystals.
  • 2003 2006: Ph.D. Student, M.V. Lomonosov Moscow State University, Faculty of Physics, Department of General Physics and Molecular Electronics.
    Ph.D. degree in Physics (2006): Photoluminescence Properties of Erbium Ions in the Layers of Silicon-Germanium Solid Solutions and Structures with Silicon Nanocrystals.
  • 2006 present: scientific associate, M.V. Lomonosov Moscow State University, Faculty of Physics, Department of General Physics and Molecular Electronics.

Research Interests: Si-based nanostructures and complexes with Rare-Earth ions; Rare-Earth doped cubic boron nitride; luminescence of Bi-doped materials, GaAs quantum rings.

Research Experience:

  • Max-Planck-Institute of Microstructure Physics, Halle (Germany), 08/2005- 09/2005.
  • Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, Dresden (Germany), 08/2006- 09/2006.
  • Albert-Ludwig University, Faculty of Engineering, Department of Microsystems Engineering, Freiburg (Germany), 07/2007 08/2007.
  • Albert-Ludwig University, Faculty of Engineering, Department of Microsystems Engineering, Freiburg (Germany), 07/2008 08/2008.
  • Van der Waals-Zeeman Institute for Experimental Physics, University of Amsterdam, Amsterdam, (Netherlands), 08/2008.
  • Albert-Ludwig University, Faculty of Engineering, Department of Microsystems Engineering, Freiburg (Germany), 01/2009 02/2009.
  • Albert-Ludwig University, Faculty of Engineering, Department of Microsystems Engineering, Freiburg (Germany), 01/2011 02/2011.
  • Albert-Ludwig University, Faculty of Engineering, Department of Microsystems Engineering, Freiburg (Germany), 06/2013 07/2013.

Awards and Honours:

  • International Soros Foundation, Ph.D. Student Award (2005).
  • Moscow State University Scholarship for Talented Young Lecturers and Scientists (2007, 2008, 2013).
  • DAAD Scholarship: Scientific probations for scientists and institute lecturers (2008).
  • Faculty of Physics (Moscow State University) Young Scientists Competition award (2011).

Spoken Languages: Russian (native), English (fluent), German (intermediate).

Publication list of Dr. D. Zhigunov

  • 1. G. K. Kitaeva, K. A. Kuznetsov, V. F. Morozova, I. I. Naumova, A. N. Penin, A. V. Shepelev, A. V. Viskovatich, D. M. Zhigunov, Reduction-induced polarons and optical response of Mg-doped LiNbO3 crystals, Appl. Phys. B, 2004, v. 78 (6), pp. 759-764.
  • 2. V. Yu. Timoshenko, M. G. Lisachenko, O. A. Shalygina, B. V. Kamenev, D. M. Zhigunov, S. A. Teterukov, P. K. Kashkarov, J. Heitmann, M. Zacharias, Comparative study of photoluminescence of undoped and erbium-doped size-controlled nanocrystalline Si/SiO2 multilayered structures, J. Appl. Phys., 2004, v. 96 (4), pp. 2254-2260.
  • 3. V. Yu. Timoshenko, O. A. Shalygina, M. G. Lisachenko, D. M. Zhigunov, S. A. Teterukov, P. K. Kashkarov, D. Kovalev, M. Zacharias, K. Imakita, M. Fujii, Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation, Physics of the Solid State, 2005, v. 47 (1), pp. 121-124.
  • 4. S. A. Teterukov, M. G. Lisachenko, O. A. Shalygina, D. M. Zhigunov, V. Yu. Timoshenko, P. K. Kashkarov, Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescence, Physics of the Solid State, 2005, v. 47 (1), pp. 106-109.
  • 5. M. V. Stepikhova, D. M. Zhigunov, V. G. Shengurov, V. Yu. Timoshenko, L. V. Krasil'nikova, V. Yu. Chalkov, S. P. Svetlov, O. A. Shalygina, P. K. Kashkarov, Z. F. Krasil'nik, Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures, JETP Letters, 2005, v. 81 (10), pp. 494-497.
  • 6. P. A. Forsh, D. M. Zhigunov, L. A. Osminkina, V. Yu. Timoshenko and P. K. Kashkarov, Strong anisotropy of lateral electrical transport in (110) porous silicon films, Phys. Stat. Sol. (c), 2005, v. 2 (9), pp. 3404-3408.
  • 7. E. A. Lebedev, M. Ya. Goykhman, D. M. Zhigunov, I. V. Podeshvo, V. V. Kudryavtsev, V. Yu. Timoshenko, Luminescence and electrical conductivity of polyamide acid and its metal-polymer complexes with la and Tb, Semiconductors, 2005, v. 39 (11), pp. 1333-1337.
  • 8. S. A. Teterukov, M. G. Lisachenko, D. M. Zhigunov, O. A. Shalygina, P. K. Kashkarov, V. Yu. Timoshenko, Effect of dielectric function inhomogeneities on spectral width of Er3+ ion luminescence in structures of Si nanocrystals, Phys. Stat. Sol. (b), 2005, v. 242 (15), pp. 3177-3181.
  • 9. Z.F. Krasilnik, B.A. Andreev, T. Gregorkiewicz, W. Jantsch, M.A.J. Klik, D.I. Kryzhkov, L.V. Krasilnikova, V.P. Kuznetsov, H. Przybylinska, D.Yu. Remizov, V.G. Shengurov, V.B. Shmagin, M.V. Stepikhova, V.Yu. Timoshenko, N.Q. Vinh, A.N. Yablonskiy, D.M. Zhigunov, Erbium doped silicon single- and multilayer structures for LED and laser applications, in Rare-Earth Doping for Optoelectronic Applications, Mat. Res. Soc. Symp. Proc., 2005, v. 866, art. no. V1.4, pp. 13-24.
  • 10. P. K. Kashkarov, O. A. Shalygina, D. M. Zhigunov, D. A. Sapun, S. A. Teterukov, V. Y. Timoshenko, J. Heitmann, M. Schmidt, M. Zacharias, K. Imakita, M. Fujii, S. Hayashi, Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation, Pros. SPIE, 2005, v. 5850, p.20-24.
  • 11. M.V. Stepikhova, L.V. Krasilnikova, Z.F. Krasilnik, V.G. Shengurov, V.Yu. Chalkov, S. Svetlov, D.M. Zhigunov, V.Yu. Timoshenko, P.K. Kashkarov, Si/SiGe:Er/Si Structures for Laser Realization: Theoretical Analysis and Luminescent Studies, Journal of Crystal Growth, 2006, v. 288 (1), pp. 65-69.
  • 12. Z. Krasilnik, B. Andreev, T. Gregorkievicz, W. Jantsch, D. Kryzhkov, L. Krasilnikova, V. Kuznetsov, H. Przybylinska, D. Remizov, V. Shmagin, M. Stepikhova, V. Timoshenko, N. Vinh, A. Yablonskiy, D. Zhigunov, Erbium doped silicon single- and multilayer structures for LED and laser applications, Journal of Materials Research, 2006, v. 21 (3), pp. 574-583.
  • 13. Z.F. Krasilnik, B.A. Andreev, T. Gregorkievicz, L.V. Krasilnikova, V.P. Kuznetsov, H. Przybylinska, D.Yu. Remizov, V.B. Shmagin, V.G. Shengurov, M.V. Stepikhova, V.Yu. Timoshenko, D.M. Zhigunov, Single- and multilayer Si:Er structures for LED and laser applications grown with sublimation MBE technique, Proceedings SPIE, 2006, v. 6180, art. no. 61800L.
  • 14. M.V. Stepikhova, L.V. Krasilnikova, Z.F. Krasilnik, V.G. Shengurov, V.Yu. Chalkov, D.M. Zhigunov, O.A. Shalygina and V.Yu. Timoshenko, Observation of the population inversion of erbium ion states in Si/Si1?xGex:Er/Si structures under optical excitation, Optical Materials, 2006, v. 28 (6-7), pp. 893-896.
  • 15. V.Yu. Timoshenko, D.M. Zhigunov, P.K. Kashkarov, O.A. Shalygina, S.A. Teterukov, R.J. Zhang, M. Zacharias, M. Fujii and Sh. Hayashi, Photoluminescence properties of erbium-doped structures of silicon nanocrystals in silicon dioxide matrix, J. Non-Cryst. Solids, 2006, v. 352, pp. 1192-1195.
  • 16. D.M. Zhigunov, O.A. Shalygina, S.A. Teterukov, V.Yu. Timoshenko, P.K. Kashkarov, M. Zacharias, Photoluminescence of erbium ions in heterostructures with silicon nanocrystals, Semiconductors, 2006, v. 40 (10), pp. 1193-1197.
  • 17. D.A. Palenov, D.M. Zhigunov, O.A. Shalygina, P.K. Kashkarov, V.Yu. Timoshenko, Specific features of dissipation of electronic excitation energy in coupled molecular solid systems based on silicon nanocrystals on intense optical pumping, Semiconductors, 2007, v. 41 (11), pp. 1351-1355.
  • 18. E.A. Lebedev, M.Ya. Goikhman, D.M. Zhigunov, I.V. Podeshvo, S.E. Nikitin, P.A. Forsh, V.V. Kudryavtsev and A.V. Yakimanskii, Intrinsic luminescence of Tb in metal-polymer complexes of polyamide acids, Semiconductors, 2008, v. 42 (5), pp. 604-607.
  • 19. O.A. Shalygina, D.M. Zhigunov, D.A. Palenov, V.Yu. Timoshenko, P.K. Kashkarov, M. Zacharias, P. M. Koenraad, Population dynamics of excitons in silicon nanocrystals structures under strong optical excitation, Advanced Materials Research, 2008, v. 31, pp. 196-198.
  • 20. D.M. Zhigunov, V.N. Seminogov, V.Yu. Timoshenko, V.I. Sokolov, V.N. Glebov, A.M. Malyutin, N.E. Maslova, O.A. Shalygina, S.A. Dyakov, A.S. Akhmanov, V.Ya. Panchenko, P.K. Kashkarov, Effect of thermal annealing on structure and photoluminescence properties of silicon-rich silicon oxides, Physica E: Low-dimensional Systems and Nanostructures, 2009, v. 41, pp. 1006-1009.
  • 21. O.A. Shalygina, I.A. Kamenskikh, D.M. Zhigunov, V.Yu. Timoshenko, P.K. Kashkarov, M. Zacharias, M. Fujii, Optical properties of silicon nanocrystals in silicon dioxide matrix over wide ranges of excitation intensity and energy, J. Nanoelectronics and Optoelectronics, 2009, v. 4, pp. 147-151.
  • 22. V.N. Seminogov, V.I. Sokolov, V.N. Glebov, A.M. Malyutin, E.V. Troickaya, S.I. Molchanova, A.S. Akhmanov, V.Ya. Panchenko, V.Yu. Timoshenko, D.M. Zhigunov, P.A. Forsh, O.A. Shalygina, N.E. Maslova, S.S. Abramchuk, P.K. Kashkarov, Structure-phase transformations and optical properties studies of composites based on silicon nanoclusters in silicon oxide matrix, Dynamics of complex systems, 2009, v. 3 (2), pp. 3-16.
  • 23. S.A. Dyakov, D.M. Zhigunov, V.Yu. Timoshenko, Specific features of erbium ion photoluminescence in structures with amorphous and crystalline silicon nanoclusters in silica matrix, Semiconductors, 2010, v. 44 (4), pp. 467-471.
  • 24. N.E. Maslova, A.A. Antonovsky, D.M. Zhigunov, V.Yu. Timoshenko, V.N. Glebov, V.N. Seminogov, Raman Studies of Silicon Nanocrystals Embedded in Silicon Suboxide Layers, Semiconductors, 2010, v. 44 (8), pp. 1040-1043.
  • 25. E.M. Shishonok, S.V. Leonchik, A. Braud, J.W. Steeds, O.R. Abdullaev, A.S. Yakunin, D.M. Zhigunov, Photoluminescence of micropowders of europium-doped cubic boron nitride, J. Opt. Technol., 2010, v. 77 (12), pp. 788-795.
  • 26. A.N. Romanov, Z.T. Fattakhova, D.M. Zhigunov, V.N. Korchak, V.B. Sulimov, On the origin of near-IR luminescence in Bi-doped materials (I). Generation of low-valence bismuth species by Bi3+ and Bi0 synproportionation, Opt. Mat., 2011, v. 33 (4), pp. 631-634.
  • 27. P.A. Forsh, A.S. Gavrilyuk, E.A. Forsh, D.M. Zhigunov, M.N. Martyshov, A.A. Antonovskii, I.D. Sysoev, A.S. Vorontsov, P.K. Kashkarov, Conductivity of structures with silicon nanocrystals in oxide matrix, Nanotechnologies in Russia, v. 6 (1-2), pp. 125-129 (2011).
  • 28. A.N. Romanov, E.V. Haula, Z.T. Fattakhova, A.A. Veber, V.B. Tsvetkov, D.M. Zhigunov, V.N. Korchak, V.B. Sulimov, Near-IR luminescence from subvalent bismuth species in fluoride glass, Optical Materials, v. 34 (1), pp. 155-158 (2011).
  • 29. D.M. Zhigunov, S.A. Dyakov, V.Yu. Timoshenko, A.N. Yablonskiy, D. Hiller, and M. Zacharias, Photoluminescence properties of Er-implanted SiO/SiO2 multilayered structures with amorphous and crystalline Si nanoclusters, J. Nanoelectronics and Optoelectronics, v. 6, pp. 1-4 (2011).
  • 30. E.M. Shishonok, J.W. Steeds, A.V. Pysk, E.O. Mosunov, O.R. Abdullaev, A.S. Yakunin, D.M. Zhigunov, Structural studies of rare-earth activated cubic boron nitride micropowders, Powder Metallurgy and Metal Ceramics, v. 50 (11-12), pp. 754-767 (2012).
  • 31. D.M. Zhigunov, N.V. Shvydun, A.V. Emelyanov, V.Yu. Timoshenko, P.K. Kashkarov and V.N. Seminogov, Photoluminescence study of the structural evolution of amorphous and crystalline silicon nanoclusters during the thermal annealing of silicon suboxide films with different stoichiometry, Semiconductors, v. 46, pp. 354-359 (2012).
  • 32. A.V. Emelyanov, N.V. Shvydun, D.M. Zhigunov, V.Yu. Timoshenko, V.N. Seminogov, P.K. Kashkarov, Investigation of the dependence of the photoluminescence properties of silicon nanoclusters on their volume fraction in a silicon oxide matrix, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, v. 6, No. 3, pp. 536540 (2012).
  • 33. S.A. Dyakov, D.M. Zhigunov, A. Hartel, M. Zacharias, T.S. Perova, and V.Yu. Timoshenko, Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals, Appl. Phys. Lett., v. 100, p. 061908 (2012).
  • 34. D.M. Zhigunov, A.V. Emelyanov, V.Yu. Timoshenko, V.I. Sokolov, V.N. Seminogov, Percolation effect in structures with amorphous and crystalline silicon nanoclusters, Phys. status solidi (c) v. 9, pp. 14741476 (2012).
  • 35. I.G. Fomina, Z.V. Dobrokhotova, G.G. Aleksandrov, V.I. Zhilov, I.P. Malkerova, A.S. Alikhanyan, D.M. Zhigunov, A.S. Bogomyakov, V.I. Gerasimova, V.M. Novotortsev, I.L. Eremenko, Synthesis and characterization of new heterodinuclear (Eu, Tb) lanthanide pivalates, Polyhedron, v. 50, pp. 297-305 (2013).
  • 36. V.A. Mukhanov, P.S. Sokolov, A.N. Baranov, V.Yu. Timoshenko, D.M. Zhigunov, V.L. Solozhenko, Congruent melting and rapid single-crystal growth of ZnO at 4 GPa, CrystEngComm, v.15 (32), pp. 6318-6322 (2013).